Micron Technology, Inc.announced that Semiconductor Insights has recognized its 32-gigabit, 34-nanometer NAND flash and 1Gb, 50nm DRAM innovations for SI’s Eighth Annual Insight Awards program.
The 32Gb, 34nm NAND chip – which was jointly developed by Intel and Micron and manufactured by the companies’ NAND flash joint venture, IM Flash Technologies – has been selected as a finalist in two categories including Most Innovative Process Technology and Most Innovative Non-Volatile Memory. According to SI, the 32Gb, 34nm chip is the highest density monolithic multi-level cell NAND flash chip the industry has seen to date. With its high-density and tiny size, the chip enables customers to easily increase their NAND storage capacity for a number of consumer and computing products.
The 1Gb, 50nm DDR2 chip – which was jointly developed through Micron’s DRAM joint development relationship with Nanya Technology Corporation – has been selected as a finalist in the category of Most Innovative DRAM. The 1Gb, 50nm DDR2 chip measures just 41mm², providing customers with the smallest DRAM die size currently available on the market. After analyzing the product, SI noted that the product features the most advanced DRAM process technology they have analyzed to date.
The Insight Awards honor companies who have shaped the semiconductor industry over the past year, through technical achievements and innovations. The Insight Awards program contains four distinct categories and is judged by a panel of leading industry experts, including Edward Keyes, chief technology officer, TechInsights Services; David Carey, president, Portelligent; Patrick Mannion, editorial director, TechOnline, and senior analysts from Semiconductor Insights. The judges will choose winners in each of the nomination-based categories.
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